Papers in 2001


  1. Y. Ikuhara, “Grain boundary and interface structures in ceramics,”
    J. Ceram. Soc. Jpn, 109[1271], S110-S120(2001).

  2. Y. Ikuhara, H. Yoshida, and T. Sakuma, “Impurity effects on grain boundary strength in structural ceramics,”
    Mater. Sci. Eng. A Struct. Mater. , 319, 24-30(2001).

  3. C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, and Y. Ikuhara, “Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy,”
    Appl. Phys. Lett., 79[24], 3941-3943(2001).

  4. X. L. Ma, K. Yamagiwa, and Y. Ikuhara, “YBa2Cu3O7-y and YbBa2Cu3O7-y superconducting films prepared by chemical solution deposition on SrTiO3(001) substrate,”
    Chem. Phys. Lett., 347[4-6], 285-290(2001).

  5. J. Mimurada, M. Nakano, K. Sasaki, Y. Ikuhara, and T. Sakuma, “Effect of cation doping on the superplastic flow in yttria-stabilized tetragonal zirconia polycrystals,”
    J. Am. Ceram. Soc., 84[8], 1817-1821(2001).

  6. K. Sasaki, M. Nakano, J. Mimurada, Y. Ikuhara, and T. Sakuma, “Strain hardening in superplastic codoped yttria-stabilized tetragonal-zirconia polycrystals,”
    J. Am. Ceram. Soc., 84[12], 2981-2986(2001).

  7. J. Shibata, A. Oka, T. Izumi, Y. Shiohara, T. Hirayama, and Y. Ikuhara, “Influence of antiphase boundaries on critical current densities in YBa2Cu3O7-y single crystals,”
    J. Mater. Res., 16[7], 1935-1941(2001).

  8. N. Shibata, J. Katamura, A. Kuwabara, Y. Ikuhara, and T. Sakuma, “The instability and resulting phase transition of cubic zirconia,”
    Mater. Sci. Eng. A Struct. Mater., 312[1-2], 90-98(2001).

  9. N. Shibata, T. Yamamoto, Y. Ikuhara, and T. Sakuma, “Structure of [110] tilt grain boundaries in zirconia bicrystals,”
    J. Electron Microsc., 50[6], 429-433(2001).

  10. N. Shirahata, K. Kijima, X. L. Ma, and Y. Ikuhara, “A new type of stacking fault in beta-SiC,”
    Jpn. J. Appl. Phys. Part 1, 40[2A], 505-508(2001).

  11. N. Shirahata, K. Kijima, X. L. Ma, and Y. Ikuhara, “Thermal change of unstable stacking faults in beta-SiC,”
    Jpn. J. Appl. Phys. Part 1, 40[6A], 3969-3974(2001).

  12. D. V. Shtansky, K. Kaneko, Y. Ikuhara, and E. A. Levashov, “Characterization of nanostructured multiphase Ti-Al-B-N thin films with extremely small grain size,”
    Surf. Coat. Technol., 148[2-3], 206-215(2001).

  13. D. V. Shtansky, S. A. Kulinich, K. Terashima, T. Yoshida, and Y. Ikuhara, “Crystallography and structural evolution of LiNbO3 and LiNb1-xTaxO3 films on sapphire prepared by high-rate thermal plasma spray chemical vapor deposition,”
    J. Mater. Res., 16[8], 2271-2279(2001).

  14. T. Yamamoto, and Y. Ikuhara, “Electron transport behaviours in Nb-doped SrTiO3 bicrystals,”
    J. Electron Microsc., 50[6], 485-488(2001).

  15. T. Yamamoto, Y. Ikuhara, and T. Sakuma, “Current-voltage characteristics across 45 degrees symmetric tilt boundary in highly donor-doped SrTiO3 bicrystal,”
    J. Mater. Sci. Lett., 20[19], 1827-1829(2001).

  16. T. Yamamoto, Y. Ikuhara, T. Watanabe, T. Sakuma, Y. Taniuchi, K. Okada, and T. Tanase, “High resolution microscopy study in Cr3C2-doped WC-Co,”
    J. Mater. Sci., 36[16], 3885-3890(2001).

  17. H. Yoshida, Y. Ikuhara, and T. Sakuma, “Grain boundary analysis of Lu-doped Al2O3 by EDS and EELS,”
    J. Jpn Inst. Met., 65[5], 356-360(2001).

  18. H. Yoshida, Y. Ikuhara, and T. Sakuma, “Transient creep in fine-grained polycrystalline Al2O3 with Lu3+ ion segregation at the grain boundaries,”
    J. Mater. Res., 16[3], 716-720(2001).

  19. H. Yoshida, Y. Ikuhara, and T. Sakuma, “Vacancy effect of dopant cation on the high-temperature creep resistance in polycrystalline Al2O3,"
    Mater Sci Eng A Struct Mater, 319, 843-848(2001).

  20. M. Yoshizumi, Y. Nakamura, T. Izumi, Y. Shiohara, Y. Ikuhara, and T. Sakuma, “Phase separation of Nd1+xBa2-xCu3O6+delta during annealing processing,”
    Physica C, 357, 354-358(2001).

  21. M. Yoshizumi, Y. Nakamura, T. Izumi, Y. Shiohara, Y. Ikuhara, and T. Sakuma, “Solid state phase transformation of Nd1+xBa2-xCu3O6+delta during annealing processing,”
    J. Jpn Inst. Met., 65[3], 139-142(2001).

  22. 桑原彰秀、幾原雄一、佐久間健人、「第一原理分子軌道計算法による安定化ジルコニアの相安定性評価」、
    材料別冊、第50巻、第6号、619-624頁、平成13年6月(2001)。

  23. Y. Ikuhara, T. Yamamoto, A. Kuwabara, H. Yoshida and T. Sakuma, “Structure and chemistry of grain boundaries in SiO2-doped TZP”,
    Sci. Technol. Adv. Mater., 2[2], 411-424(2001).