Papers in 2000


  1. K. Hayashi, T. Yamamoto, Y. Ikuhara, and T. Sakuma, “Formation of potential barrier related to grain-boundary character in semiconducting barium titanate,”
    J. Am. Ceram. Soc., 83[11], 2684-2688(2000).

  2. K. Hayashi, T. Yamamoto, Y. Ikuhara, T. Sakuma, “Misorientation dependence of grain boundary resistivity in Nb-doped barium titanate,”
    Ceramic Tansactions, 181-1, 51-54(2000).

  3. D. X. Huang, Y. Sasaki, and Y. Ikuhara, “Stair-step columnar defects in ion-irradiated Bi2Sr2CaCu2Ox crystals,”
    Physica C, 339[4], 281-286(2000).

  4. D. X. Huang, Y. Sasaki, I. Hirabayashi, and Y. Ikuhara, “Long columnar defects with constant column size in 180-MeV Fe-irradiated Bi2Sr2CaCu2Ox crystals,”
    Phys. Rev. B, 61[22], 15442-15449(2000).

  5. J. Mimurada, K. Sasaki, Y. Ikuhara, T. Sakuma, “Grain boundary analysis and superplastic characteristics in GeO2-doped TZP,”
    Key Engineering Materials, 171-1, 383-388(2000).

  6. M. Nakano, K. Shimura, J. Mimurada, K. Sasaki, Y. Ikuhara, T. Sakuma, “Superplasticity in GeO2-Nd2O3 doped Y-TZP,”
    Key Engineering Materials, 171-1, 343-348(2000).

  7. A. Oka, S. Koyama, T. Izumi, Y. Shiohara, X. L. Ma, T. Yamamoto, Y. Ikuhara, T. Sakuma, Y. Sugawara, and T. Hirayama, “Critical current density-magnetic field curve for untwinned orthorhombic Nd1+xBa2-xCu3O7 +/-delta single crystal and its microstructure,”
    Jpn. J. Appl. Phys. Part 1, 39[12A], 6515-6522(2000).

  8. K. Sasaki, K. Shimura, J. Mimurada, Y. Ikuhara, T. Sakuma, “The effect of alumina doping on the superplastic characteristics of 3 Y-TZP,"
    Key Engineering Materials, 171-1, 377-382(2000).

  9. A. Sawabe, H. Fukuda, T. Suzuki, and Y. Ikuhara, “Interface between CVD diamond and iridium films,”
    Surf. Sci., 467[1-3], L845-L849(2000).

  10. J. Shibata, K. Yamagiwa, I. Hirabayashi, T. Hirayama, and Y. Ikuhara, “Transmission electron microscopic studies of YbBa2Cu3O7-delta superconducting final films formed on LaAlO3(001) substrates by the dipping-pyrolysis process,”
    Jpn. J. Appl. Phys. Part 1, 39[6A], 3361-3365(2000).

  11. D. V. Shtansky, Y. Yamada-Takamura, T. Yoshida, and Y. Ikuhara, "Mechanism of nucleation and growth of cubic boron nitride thin films,"
    Science and Technology of Advanced Materials, 1[4] 219-25 (2000).

  12. D. V. Shtansky, O. Tsuda, Y. Ikuhara, and T. Yoshida, “Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition,”
    Acta Mater., 48[14], 3745-3759(2000).

  13. Y. Sugawara, N. Shibata, S. Hara, and Y. Ikuhara, “Interface structure of face-centered-cubic-Ti thin film grown on 6H-SiC substrate,
    J. Mater. Res., 15[10], 2121-2124(2000).

  14. T. Yamamoto, K. Hayashi, Y. Ikuhara, and T. Sakuma, “Current-voltage characteristics of Sigma 1 boundaries with and without cobalt ions in niobium-doped SrTiO3 bicrystals,”
    J. Am. Ceram. Soc., 83[6], 1527-1529(2000).

  15. T. Yamamoto, K. Hayashi, Y. Ikuhara, T. Sakuma, “Grain boundary structure and electrical properties in Nb-doped SrTiO3 bicrystals,”
    Key Engineering Materials, 181-1, 225-228(2000).

  16. T. Yamamoto, Y. Ikuhara, and T. Sakuma, "High resolution transmission electron microscopy study in VC-doped WC-Co compound,"
    Science and Technology of Advanced Materials, 1[2] 97-104 (2000).

  17. H. Yoshida, Y. Ikuhara, T. Sakuma, “A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al(2)O(3),”
    Key Engineering Materials, 171-1, 809-816(2000).

  18. H. Yoshida, K. Shimura, S. Suginohara, Y. Ikuhara, T. Sakuma, N. Nakagawa, Y. Waku, “High-temperature deformation in unidirectionally solidified eutectic Al2O3-YAG single crystal,”
    Key Engineering Materials, 171-1, 855-861(2000).

  19. G. D. Zhan, M. Mitomo, Y. Ikuhara, and T. Sakuma, “Effects of microstructure on superplastic behavior and deformation mechanisms in beta-silicon nitride ceramics,”
    J. Am. Ceram. Soc., 83[12], 3179-3184(2000).

  20. G. D. Zhan, M. Mitomo, Y. Ikuhara, and T. Sakuma, “High-resolution electron microscopy observation of grain-boundary films in superplastically deformed silicon nitride,”
    J. Mater. Res., 15[7], 1551-1555(2000).

  21. G. D. Zhan, M. Mitomo, T. Nishimura, R. J. Xie, T. Sakuma, and Y. Ikuhara, “Superplastic behavior of fine-grained beta-silicon nitride material under compression,”
    J. Am. Ceram. Soc., 83[4], 841-847(2000).