Papers in 2010

  1. S.-i. Amma, Y. Tokumoto, K. Edagawa, N. Shibata, T. Mizoguchi, T. Yamamoto, and Y. Ikuhara, “Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique,”
    Appl. Phys. Lett., 96[19], 193109 (2010).

  2. S. Azuma, N. Shibata, S. D. Findlay, T. Mizoguchi, T. Yamamoto, and Y. Ikuhara, “HAADF-STEM observations of a Sigma 13 grain boundary in alpha-Al2O3 from two orthogonal directions,”
    Philosophical Magazine Letters, 90[8], 539-546(2010).

  3. S. D. Findlay, N. Shibata, H. Sawada, E. Okunishi, Y. Kondo, and Y. Ikuhara, “Dynamics of annular bright field imaging in scanning transmission electron microscopy,”
    Ultramicroscopy, 110[7], 903-923(2010).

  4. S. D. Findlay, T. Saito, N. Shibata, Y. Sato, J. Matsuda, K. Asano, E. Akiba, T. Hirayama, and Y. Ikuhara, “Direct Imaging of Hydrogen within a Crystalline Environment,"
    Appl. Phys. Express, 3[11], 116603(2010).

  5. S. D. Findlay, N. Shibata, S. Azuma, and Y. Ikuhara, “Prospects for 3D imaging of dopant atoms in ceramic interfaces,”
    J. Electron. Microsc., 59, S29-S38(2010).

  6. L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara, and P. A. van Aken, “Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope,”
    Appl. Phys. Lett., 97[21], 213102 (2010).

  7. H. Hiramatsu, T. Kamiya, T. Tohei, E. Ikenaga, T. Mizoguchi, Y. Ikuhara, K. Kobayashi, and H. Hosono, “Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe,”
    J. Am. Chem. Soc., 132[42], 15060-15067(2010).

  8. H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, N. Shibata, T. Yamamoto, and Y. Ikuhara, “Atomic Structure of a CeO2 Grain Boundary: The Role of Oxygen Vacancies,”
    Nano Lett., 10[11], 4668-4672(2010).

  9. S. Kobayashi, Y. Tokuda, T. Mizoguchi, N. Shibata, Y. Sato, Y. Ikuhara, and T. Yamamoto, “Quantitative analyses of oxidation states for cubic SrMnO3 and orthorhombic SrMnO2.5 with electron energy loss spectroscopy,”
    J. Appl. Phys., 108[12], 124903 (2010).

  10. H. Koide, Y. Nagao, K. Koumoto, Y. Takasaki, T. Umemura, T. Kato, Y. Ikuhara, and H. Ohta, “Electric field modulation of thermopower for transparent amorphous oxide thin film transistors,”
    Appl. Phys. Lett., 97[18], 182105 (2010).

  11. K. Matsui, H. Yoshida, and Y. Ikuhara, “Phase-transformation and grain-growth kinetics in yttria-stabilized tetragonal zirconia polycrystal doped with a small amount of alumina,”
    J. Eur. Ceram. Soc., 30[7], 1679-1690(2010).

  12. C. M. Montesa, N. Shibata, T. Tohei, K. Akiyama, Y. Kuromitsu, and Y. Ikuhara, “Application of coincidence of reciprocal lattice point model to metal/sapphire hetero interfaces,”
    Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater., 173[1-3], 234-238(2010).

  13. Y. Nagao, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation,”
    Appl. Phys. Lett., 97[17], 172112 (2010).

  14. A. Nakahira, K. Konishi, K. Yokota, T. Kubo, Y. Sasaki, and Y. Ikuhara, “Synthesis of Novel Structured TiO2 with Mesopores by Anodic Oxidation,”
    Inorg. Chem., 49[1], 47-51(2010).

  15. K. Nakamura, T. Mizoguchi, N. Shibata, K. Matsunaga, T. Yamamoto, and Y. Ikuhara, “First-principles sliding simulation of Al-terminated Sigma 13 pyramidal twin grain boundary in alpha-Al2O3,”
    Philos. Mag. Lett., 90[3], 159-172(2010).

  16. H. Ogino, K. Machida, A. Yamamoto, K. Kishio, J.-i. Shimoyama, T. Tohei, and Y. Ikuhara, “A new homologous series of iron pnictide oxide superconductors (Fe2As2)(Can+2(Al, Ti)(n)O-y) (n=2, 3, 4),”
    Supercond. Sci. Technol., 23[11], 115005(2010).

  17. H. Ogino, S. Sato, K. Kishio, J.-i. Shimoyama, T. Tohei, and Y. Ikuhara, “Homologous series of iron pnictide oxide superconductors (Fe2As2)x Can+1(Sc,Ti)(n)O-y (n=3,4,5) with extremely thick blocking layers,”
    Appl. Phys. Lett., 97[7], 072506 (2010).

  18. H. Ohnishi, M. Takeuchi, T. Sekino, Y. Ikuhara, and K. Niihara, “Wear Resistance of SiO2-Doped Y-TZP Grinding Media During Wet Milling,”
    Int. J. Appl. Ceram. Technol., 7[4], 502-511(2010).

  19. H. Ohta, Y. Sato, T. Kato, S. Kim, K. Nomura, Y. Ikuhara, and H. Hosono, “Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal,”
    Nat. Commun., 1, 118(2010).

  20. N. Shibata, Y. Kohno, S. D. Findlay, H. Sawada, Y. Kondo, and Y. Ikuhara, “New area detector for atomic-resolution scanning transmission electron microscopy,”
    J. Electron Microsc., 59[6], 473-479(2010).

  21. N. Takahashi, T. Mizoguchi, T. Nakagawa, T. Tohei, I. Sakaguchi, A. Kuwabara, N. Shibata, T. Yamamoto, N. Ohashi, and Y. Ikuhara, “Cr diffusion in alpha-Al2O3: Secondary ion mass spectroscopy and first-principles study,”
    Phys. Rev. B, 82[17], 174302(2010).

  22. E. Tochigi, N. Shibata, A. Nakamura, T. Mizoguchi, T. Yamamoto, and Y. Ikuhara, “Structures of dissociated < 1 (1)over-bar 0 0 > dislocations and {1 (1)over-bar 0 0} stacking faults of alumina (alpha-Al2O3),”
    Acta Mater., 58[1], 208-215(2010).

  23. T. Tohei, T. Mizoguchi, H. Hiramatsu, H. Hosono, and Y. Ikuhara, “Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate,”
    Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater., 173[1-3], 229-233(2010).

  24. K. Uchida, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “A single crystalline strontium titanate thin film transistor,”
    J. Appl. Phys., 107[9], 096103 (2010).

  25. Z. Wang, M. Okude, M. Saito, S. Tsukimoto, A. Ohtomo, M. Tsukada, M. Kawasaki, and Y. Ikuhara, “Dimensionality-driven insulator-metal transition in A-site excess non-stoichiometric perovskites,”
    Nat. Commun., 1, 106(2010).

  26. Z. Wang, W. Zeng, L. Gu, M. Saito, S. Tsukimoto, and Y. Ikuhara, “Atomic-scale structure and electronic property of the LaAlO3/TiO2 interface,”
    J. Appl. Phys., 108[11], 113701 (2010).

  27. W. Zeng, T. Liu, Z. Wang, S. Tsukimoto, M. Saito, and Y. Ikuhara, “Oxygen Adsorption on Anatase TiO2 (101) and (001) Surfaces from First Principles,”
    Mater. Trans., 51[1], 171-175(2010).