Hirofumi Matsuhata




Yayoi 2-11-16, Bunkyo-ku, Tokyo, Japan, 113-8656
Phone +81-3-5841-7689
Fax +81-3-5841-7694
mail: matsuhata_sigma.t.u-tokyo.ac.jp(please insert @ instead of space)



Profile



  • Mar. 1984, Dr., Interdisciplinary Graduate School of Engineering Science, Kyushu University.
  • Apr. 1984~ Postdoc, Interdisciplinary Graduate School of Engineering Science, Kyushu University.
  • Sep. 1984~ Postdoc, Department of Physics, University of Bristol
  • Mar. 1986~ Postdoc, Department of Physics, University of Oslo
  • Apr. 1988~ Postdoc, Toyota Institute of Technology
  • Apr. 1989~ Research staff, Electro-technical Laboratory, Ministry of International Trade and Industry.
  • Apr. 2001~ Research staff, National Institute of Advanced Industrial Science and Technology, Ministry of Economy, Trade and Industry.
  • Apr. 2016~ Research Associate, The University of Tokyo.




  • Research



    Dynamical effect in diffraction physics, high-resolution electron microscopy.



    Crystallographic structures on superconductors and related materials, oxide ceramic compounds, and phase transitions



    Lattice defects, nano-structures in semiconducting materials.





    Publication list



    Recent publications

  • “Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films ”B. Chen, H. Matsuhata, K. Kumagai, T. Sekiguchi, K. Ichinoseki, and H. Okumura, J. Appl. Phys. 111 (2011) 053513-053515.

  • “Microscopic Examination of SiO2/4H-SiC Interfaces ", T. Hatakeyama, H. Matsuhata, T. Suzuki, T. Shinohe, and H. Okumura, Materials Science Forum, 679-680 (2011) 330.

  • “Tuning minority carrier lifetime through stacking fault, the case of polytype SiC”, B. Chen, H. Matsuhata, K. Kumagai, T. Sekiguchi, K. Ichinoseki, and H. Okumura, Appl. Phys. Lett. 100 (2011) 132108-132113.

  • “半導体SiC 技術と応用”, 松波、大谷、木本、中村編、日刊工業新聞、”(2011) 6.2.2 章 斜入射X線トポグラフ法による転位、積層欠陥の観察”、松畑洋文 pp220-227.

  • “Analysis of contrast and identifications of Burgers vectors for basal-plane dislocations and threading dislocations in 4H-SiC crystals obtained by synchrotron X-ray topography in grazing incidence Bragg-case geometry”, H. Matsuhata, H. Yamaguchi and T. Ohno, Philos. Mag. 92 (2012) 4599-4617.

  • “High-resolution observation of basal-plane C-core edge dislocations in 4H-SiC crystal by transmission electron microscopy”, H. Matsuhata, T. Kato, S. Tsukimoto and Y. Ikuhara, Philos. Mag. 92 (2012) 3780-3788.

  • “Characterization of triangular-defects in 4°off 4H-SiC epitaxial wafers by synchrotron X-ray topography and by transmission electron microscopy” T. Yamashita, K. Momose, D. Mutho, H. Shimodaira, T. Sato, H. Matsuhata, and M. Kitabatake, Materials Science Forum, 717-720 (2012) 363-366.

  • “Correlation between Surface Morphological Defects and Crystallographic Defects”, T. Hatakeyama, K. Ichinoseki, N. Sugiyama, H. Matsuhata, and M. Kitabatake, Materials Science Forum, 717-720 (2012) 359-363.

  • “Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-face “, T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki, K. Fukuda, T. Shinohe, and H. Okumura, Materials Science Forum, Mat. Sci. Forum 717-720 (2012) 789-792.

  • “Direct measurement of lateral macro-step velocity on an AlN vicinal surface by transmission electron microscopy”, X. Q. Shen, H. Matsuhata, T. Ide, and M. Shimizu, J. Appl. Phys. 111 (2012) 103529-4.

  • “Surface defects and accompanying imperfections in 4H-SiC”, B. Chen, H. Matsuhata, T. Sekiguchi, K. Ichinoseki, H. Okumura, Acta Materialia, 60 (2012) 51-58.

  • “平行ビームを使ったX線トポグラフィーによるSiCの転位観察”、山口博隆、松畑洋文、日本結晶学会誌 54 (2012)18-23.

  • “Threading dislocations in 4H-SiC observed by double-crystal X-ray topography “, H. Yamaguchi, and H. Matsuhata, Materials Science Forum, 740-742 (2012) 7-10.

  • “Relation between defects on 4H-SiC epitaxial surface and gate oxide reliability”, J. Sameshima, O. Ishiyama, J. Shimosato, K. Tamura, H. Ohshima, T. Yamashita, T. Tanaka, J. Senzaki, H. Matsuhata, and M. Kitabatake, Materials Science Forum, 740-742 (2013) 745-748.

  • “Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy”, X-Q. Shen, T. Takahashi, X. Rong, G. Chen, XQ. Wang, B. Shen, H. Matsuhata, T. Ide, and M. Shimizu, Appl. phys. Lett. 103 (2013) 231908-03.

  • “Analysis on generation of localized step-bunching on 4H-SiC (0001) Si face by synchrotron X-ray topography” M. Sasaki, H. Sako, K. Kojima, K. Tamura, H. Matsuhata, and M. Kitabatake , Mat. Sci. Forum, 778-780 (2013) 398-401.

  • ”Reliability of gate oxides on 4H-SiC epitaxial surface planarized CMP treatment”, K. Yamada, O. Ishiyama, K. Tamura, T. Yamashita, J. Shimosato, T. Kato, J. Senzaki, H. Matsuhata, and M. Kitabatae, Materials Science Forum, 778-780 (2013) 545-549.

  • “Origin Analyses of Trapezoid-Shape Defects in 4-deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-ray Topography”, T. Yamashita, H. Matsuhata, Y. Miyasaka, K. Momose. T. Sato, and M. Kitabatake, Materials Science Forum, 778-780 (2013) 374-377.

  • “Origin Analyses of Obtuse Triangular Defects in 4deg.-off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-ray Topography”, T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima, M. Sekine, K. Momose, T. Sato, M. Kitabatake, Materials Science Forum 740-742 (2013) 649-653.

  • “Microstructural analysis of damage layer introduced during chemo-mechanical polishing “, H. Sako, T. Yamashita, K. Tamura, M. Sasaki, M. Nagaya, K. Kawada, T. Kato, H. Matsuhata and M. Kitabatake, Materials Science Forum, 778-780 (2013) 398-401.

  • “Reciprocal space mapping studies of the initial stage of the PVT growth of 4H-SiC crystals parallel and perpendicular to the c-axis”, C. Ohshige, T. Takahashi, N. Ohtani, M. Katsuno, F. Fujimoto, S. Satoh, H. Tsuge, T. Yano, H. Matsuhata, and M. Kitabatake, Materials Science Forum, 778-780(2013) 43-46.

  • ”Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC epitaxial wafers”, O. Ishiyama, H. Sako, K. Yamada, K. Tamura, J. Senzaki, H. Matsuhata and M. Kitabatake, Jpn. J. Appl. Phys. 53 (2013) 04RP15.

  • “Characterization of (4,4)-and (5,3)-type Stacking-faults in 4deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-ray Topography and by Photo-Luminescence Spectroscopy”, T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odabara, K. Momose, T. Sato, and M. Kitabatake, Mat. Sci. Forum, 740-742 (2013) 585-588.

  • “ポストシリコン半導体—ナノ成膜ダイナミックスと基板・界面効果”,第4 編、第1 節 半導体薄膜およびヘテロ界面の原子構造評価“ NTS出版、着本亨、松畑洋文、幾原雄一, (2013) pp405-423.

  • “Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg-Barrett X-ray topography”, H. Matsuhata, H. Yamaguchi, T. Yamashita, T. Tanaka, B. Chen and T. Sekiguchi, Philos. Mag. 94 1674-1685 (2014).

  • “Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals”, N. Ohtani, C. Ohshige, M. Katsuno, T. Fujimoto, S, Sato, H. Tsuge, W. Ohhashi, T. Yano, H. Matsuhata, M. Kitabatake, J. Cryst. Growth 386 (2014) 9-15.

  • ”Characterization of scraper-shaped defects on 4H-SiC epitaxial film defects” H. Sako, T. Yamashita, J. Sameshima, O. Ishiyama, N. Sugiyama, K. Tamura, J. Senzaki, H. Matsuhata, and H. Okumura, Jpn. J. Appl. Phys. 53 (2014) 051301-051306.

  • “Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization”, B. Chen, T. Sekiguchi, H. Matsuhata, T. Ohyanagi, A. Kinoshita, and H. Okumua, Jpn. J. Appl. phys. 53(2014) 05FG01.

  • “In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC “, Appl. Phys. Lett. B. Chen, J. Chen, Y. Yao, T. Sekiguchi, H. Matsuhata, and H. Okumura, Appl. Phys. Lett. 105 (2014) 042104-03.

  • “Characterization of comet-shaped defects on C-face 4H-SiC epitaxyal wafers by electron microscopy”, T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, and M. Kitabatake, J. Cryst. Growth 416 (2014) 142-147.

  • “Crystallographic coalescence of crystalline silicon cluster into superlattice structures” Y. Iwata, K. Tomita, T. Uchida, and H. Matsuhata, Cryst. Growth and Design 15 (2015) 2119-2128.

  • “Self-generated micro-cracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal-organic chemical vapor deposition”, X-Q. Shen, T. Takahashi, H. Matsuhata, T. Ide, and M. Shimizu, Royal Soc. Chem. 17 (2015) 5014-5018.

  • ”放射光を用いたベルクバレット法による4H-SiC中の転位の観察”, 松畑洋文、山口博隆、まてりあ、54 (2015) 279-285.

  • ”4H-SiC中の転位組織の放射光トポグラフ法による解析”、松畑洋文、山口博隆、関口隆史、陳斌、大野俊之、鈴木拓馬、畠山哲夫、辻崇、米澤喜幸、荒井和雄、電気学会論文誌A、135 (2015) 768-779.

  • “Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers”, M. Sasaki, H. Matsuhata, K. Tamura, H. Sako, K. Kojima, H. Yamaguchi and M. Kitabatake, Jpn. J. Appl. Phys., 54 (2015) 091301-7.

  • “Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing”, H. Sako, H. Matsuhata, M. Sasaki, M. Nagaya, T. Kido, K. Kawada, T. Kato, J. Senzaki, M. Kitabatake and H. Okumura, , J. Appl. Phys., 119 (2016) 135702-10.

  • “Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films” T. Yamashita, T. Naijo, H. Matsuhata, K. Momose, H. Osawa and H. Okumura, 433 (2016) 97-104.

  • “Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes”, A. Tanaka, H. Matsuhata, N. Kawabata, D. Mori, K. Inoue, M. Ryo, T. Fujimoto, T. Tawara, M. Miyazato, M. Miyajima, K. Fukuda, A. Ohtsuki, T. Kato, H. Tsuchida, Y. Yonezawa and T. Kimoto, J. Appl. Phys., 119 (2016) 095711-9.


  • Past publications




    awards

  • 日本物理学会 第15回論文賞受賞(2008)

  • C-H. Lee, A. Iyo, H. Eisaki, H. Kito, M. T. Fernandez-Diaz, T. Ito, K. Kihou, H. Matsuhata, M. Braden and K. Yamada, “Effect of Structural Parameters on Superconductivity in Fluorine-Free LnFeAsO1-y (Ln = La, Nd)”, J. Phys. Soc. Jpn 77 No8. 083704-4 (2008).