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~1994年 学術論文

  • [1]  Y. Ikuhara, P. Pirouz, A. H. Heuer, S. Yadavalli, and C. P. Flynn, “Structure of V-Al2O3 interfaces grown by molecular-beam epitaxy,” Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties, 70[1], 75-97(1994).

    [2]  G. Pezzotti, I. Tanaka, Y. Ikuhara, M. Sakai, and T. Nishida, “Evidences for dilute solid-solutions in the Si3N4-TiN system,” Scripta Metallurgica Et Materialia, 31[4], 403-406(1994).

    [3]  K. Shibuki, K. Sasaki, M. Yagi, T. Suzuki, and Y. Ikuhara, “Diamond coating on WC-CO and WC for cutting tools,” Surface & Coatings Technology, 68, 369-373(1994).

    [4]  M. Yoshida, T. Nakamoto, T. Kitamura, O. B. Hyun, I. Hirabayashi, S. Tanaka, A. Tsuzuki, Y. Sugawara, and Y. Ikuhara, “Critical currents of YbA2Cu3OY thick-films prepared by liquid-phase epitaxial-growth,” Applied Physics Letters, 65[13], 1714-1716(1994).

    [5]  W. L. Zhou, Y. Sasaki, and Y. Ikuhara, “Microstructure characterization of Bi2Sr2CaCu2OX single-crystal irradiated with 18 MEV Fe8+ ions,” Physica C, 234[3-4], 323-332(1994).

    [6]  Y. Ikuhara, and P. Pirouz, “A high-resolution electron-microscopy study of vanadium deposited on the basal-plane of sapphier,” Ultramicroscopy, 52[3-4], 421-428(1993).

    [7]  H. Hosono, Y. Ikuhara, Y. Abe, and R. A. Weeks, “Formation of copper nanoscale particles in implanted silica glass,” Journal of Materials Science Letters, 11[18], 1257-1259(1992).

    [8]  Y. Ikuhara, T. Suzuki, and Y. Kubo, “Transmission electoron-microscopy insitu observation of crack-propagation in sintered alumina,” Philosophical Magazine Letters, 66[6], 323-327(1992).

    [9]  K. Michishita, Y. Ikuhara, Y. Kubo, K. Takahashi, Y. Kamisada, and T. Ogawa, “Electrical-properties of bulk BSCCO/In interfaces,”Physica C, 185, 2293-2294(1991).

    [10] N. Murayama, Y. Kodama, S. Sakaguchi, F. Wakai, K. Michishita, and Y. Ikuhara, “Intergranular pinning potential and transport current path in Bi-Pb-Sr-Ca-Cu-O polycrystal superconductor,” Physica C, 185, 2213-2214(1991).

    [11] K. Sato, H. Miyazaki, Y. Ikuhara, H. Kurishita, and H. Yoshinaga, “Structure and Strength of grain-boundaries in Si bicrystals with (111) twist misorientations,” Materials Transactions Jim, 31[10], 865-872(1990).

    [12] Y. Ikuhara, H. Miyazaki, H. Kurishita, and H. Yoshinaga, “Grain-boundary structure and strength of SiC bicrystals,” Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi-Journal of the Ceramic Society of Japan, 97[12], 1511-1516(1989).

    [13] Y. Ikuhara, Y. Suyama, and K. Kijima, “Carbon in plasma sintered SiC-C composites,” Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi-Journal of the Ceramic Society of Japan, 97[11], 1403-1408(1989).

    [14] K. Sato, H. Miyazaki, Y. Ikuhara, H. Kurishita, and H. Yoshinaga, “Structure and strength of grain-boundaries in Si bicrystals with (111) twist misorientations,” Journal of the Japan Institute of Metals, 53[5], 536-542(1989).

    [15] Y. Ikuhara, M. Kobayashi, and H. Yoshinaga, “Joining of reaction Bonded Si3N4 using Al,” Yogyo-Kyokai-Shi, 95[9], 921-928(1987).

    [16] Y. Ikuhara, H. Kurishita, and H. Yoshinaga, “Grain-boundary and high-temperature strength of sintered SiC,” Journal of the CERAMIC SOCIETY of Japan, International Edition, 95, 592(1987), (Yogyo-Kyokai-Shi, 95[6], 638-645, 1987).

    [17] Y. Ikuhara, and H. Yoshinaga, “Change in grain-boundary structure of AlN-polytype sialon by electron-irradiation,” Journal of Electron Microscopy, 36[6], 408-410(1987).

    [18] Y. Ikuhara, and H. Yoshinaga, “Electron-microscopic studies on grain-boundaries and joined interfaces of nonoxide ceramics,” Journal of Electron Microscopy, 36[1-2], 55-55(1987).

    [19] Y. Ikuhara, H. Ueno, H. Yoshinaga, “Mechanical properties of developed Si3N4SiC composite material with relatively high flexibility”, Yogyo Kyokai shi, 93[1080], 409-417(1985).